Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
| dc.contributor.author | Gaidar, G.P. | |
| dc.date.accessioned | 2017-05-26T16:12:02Z | |
| dc.date.available | 2017-05-26T16:12:02Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79×10¹³ cm⁻³ and less) the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ. | uk_UA |
| dc.identifier.citation | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.80.Ed, 61.82.Fk, 72.20.-i | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117756 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge | uk_UA |
| dc.type | Article | uk_UA |
Файли
Оригінальний контейнер
1 - 1 з 1
Контейнер ліцензії
1 - 1 з 1
Завантаження...
- Назва:
- license.txt
- Розмір:
- 817 B
- Формат:
- Item-specific license agreed upon to submission
- Опис: