The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

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dc.contributor.authorBelyaev, A.E.
dc.contributor.authorBoltovets, N.S.
dc.contributor.authorKapitanchuk, L.M.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKladko, V.P.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorKuchuk, A.V.
dc.contributor.authorLytvyn, O.S.
dc.contributor.authorMilenin, V.V.
dc.contributor.authorKorostinskaya, T.V.
dc.contributor.authorAtaubaeva, A.B.
dc.contributor.authorNevolin, P.V.
dc.date.accessioned2017-05-26T12:07:14Z
dc.date.available2017-05-26T12:07:14Z
dc.date.issued2010
dc.description.abstractWe consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.uk_UA
dc.description.sponsorshipThis work was supported by the Government Goaloriented Scientific and Technical Program “The development and acquisition of microelectronic technologies, organization of serial production of devices and systems with them” 2008-2011. Decree of the Cabinet of Ministers of Ukraine No 1335 from November 21, 2007.uk_UA
dc.identifier.citationThe features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 85.30.De
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117698
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleThe features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contactsuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1