Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy

Abstract

Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented.