Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy

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dc.contributor.authorMaronchuk, I.E.
dc.contributor.authorD’yachenko, A.M.
dc.contributor.authorMinailov, A.I.
dc.contributor.authorKurak, V.V.
dc.contributor.authorChorny, I.V.
dc.date.accessioned2017-06-05T09:36:38Z
dc.date.available2017-06-05T09:36:38Z
dc.date.issued2004
dc.description.abstractPeculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented.uk_UA
dc.description.sponsorshipThe researches described in this publication were possible partly by Grant Award # UE2-2225 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF). The authors also thank Yu. Jegerya for valuable contribution to obtaining the STM-images of QDs.uk_UA
dc.identifier.citationObtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 73.40.Lq
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119216
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleObtaining heterostructures with quantium dots for sensors by using liquid phase epitaxyuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4