Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions

dc.contributor.author	Deibuk, V.G.
dc.contributor.author	Korolyuk, Yu.G.
dc.date.accessioned	2017-06-10T11:22:12Z
dc.date.available	2017-06-10T11:22:12Z
dc.date.issued	2005
dc.description.abstract	Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.	uk_UA
dc.identifier.citation	Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 02.20.–a, 78.55.–m, 78.40.Fy
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/119915
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions	uk_UA
dc.type	Article	uk_UA

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