Моделювання вольт-амперних характеристик структури метал-i-n⁺ із самоорганізованими нанокластерами

Abstract

The computational method of current voltage characteristics of metal undoped semiconductor (i) - doped semiconductor substrate (n)+ structure with clusters of defects is described. The offered method permits to take into account the elastic deformations near the defect deformation structures and the deformations caused by a mismatch of crystal lattices of contacting semiconductor materials.