Zero bias terahertz and subterahertz detector operating at room temperature

Abstract

In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3·10⁻⁸ W/Hz¹/² and 5.4·10⁻⁹ W/Hz¹/² at bias current I = 1 mA and I = 0, respectively.