Radiative recombination in initial and electron-irradiated GaP crystals

Скорочена інформація про документ
dc.contributor.authorHontaruk, O.
dc.contributor.authorKonoreva, O.
dc.contributor.authorLitovchenko, P.
dc.contributor.authorManzhara, V.
dc.contributor.authorOpilat, V.
dc.contributor.authorPinkovska, M.
dc.contributor.authorTartachnyk, V.
dc.date.accessioned2017-05-26T14:38:56Z
dc.date.available2017-05-26T14:38:56Z
dc.date.issued2010
dc.description.abstractPhotoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism. Radiative recombination intensity was shown to recover efficiently within the temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC.uk_UA
dc.identifier.citationRadiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 29.40.-n, 85.30.-z, 85.60.Dw
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117739
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleRadiative recombination in initial and electron-irradiated GaP crystalsuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
6-Hontaruk.pdf
Розмір:
247.47 KB
Формат:
Adobe Portable Document Format
Завантажити

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис:
Завантажити

Колекція

Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1