Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
dc.contributor.author | Abouelaoualim, D. | |
dc.date.accessioned | 2017-06-14T16:44:30Z | |
dc.date.available | 2017-06-14T16:44:30Z | |
dc.date.issued | 2005 | |
dc.description.abstract | We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case. | uk_UA |
dc.identifier.citation | Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 71.20.-b, 73.21.Cd | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/121558 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice | uk_UA |
dc.type | Article | uk_UA |
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