Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors

dc.contributor.authorPopovych, K.O.
dc.date.accessioned2017-05-29T19:24:53Z
dc.date.available2017-05-29T19:24:53Z
dc.date.issued2007
dc.description.abstractIn this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and Zn-Cu bonds have been calculated by the method based on a linear combination of atomic orbitals and pseudo-potential. Time dependences of brightness have been found to adequately fit a two-component exponential dependence. The first part of the exponential curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second one to the diffusion of Cu in ZnS matrix.uk_UA
dc.identifier.citationDegradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 78.60.Fi, 71.15.Fv, 71.55.Gs
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118337
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDegradation processes in encapsulated ZnS: Cu powder electroluminescent phosphorsuk_UA
dc.typeArticleuk_UA

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