Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors
dc.contributor.author | Popovych, K.O. | |
dc.date.accessioned | 2017-05-29T19:24:53Z | |
dc.date.available | 2017-05-29T19:24:53Z | |
dc.date.issued | 2007 | |
dc.description.abstract | In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and Zn-Cu bonds have been calculated by the method based on a linear combination of atomic orbitals and pseudo-potential. Time dependences of brightness have been found to adequately fit a two-component exponential dependence. The first part of the exponential curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second one to the diffusion of Cu in ZnS matrix. | uk_UA |
dc.identifier.citation | Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 78.60.Fi, 71.15.Fv, 71.55.Gs | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118337 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors | uk_UA |
dc.type | Article | uk_UA |
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