Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate

dc.contributor.authorLysiuk, V.O.
dc.contributor.authorStaschuk, V.S.
dc.contributor.authorKluy, M.I.
dc.contributor.authorVakulenko, O.V.
dc.contributor.authorPoperenko, L.V.
dc.date.accessioned2017-05-27T12:22:27Z
dc.date.available2017-05-27T12:22:27Z
dc.date.issued2007
dc.description.abstractThe systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ion implantation essentially modifies the near-surface structure resulting in a change of its optical, electrical, and mechanical properties. Strong difference in the near-surface structures between implanted systems with Ni or Pd thin films is observed. Such a difference is explained by the heterogeneity of an ion beam and different properties of the materials. The application to the development of high-sensitive pyroelectric detectors with high damage threshold is proposed.uk_UA
dc.identifier.citationInfluence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate / V.O. Lysiuk, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko, L.V. Poperenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 76-80. — Бібліогр.: 13 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 68.55.Ln, 85.60.Gz
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117919
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleInfluence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalateuk_UA
dc.typeArticleuk_UA

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