Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction

dc.contributor.author	Karimov, A.V.
dc.contributor.author	Yodgorova, D.M.
dc.date.accessioned	2017-06-12T14:42:44Z
dc.date.available	2017-06-12T14:42:44Z
dc.date.issued	2005
dc.description.abstract	Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different in their efficiency under the used level of the illumination intensity.	uk_UA
dc.identifier.citation	Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction / A.V. Karimov, D.M. Yodgorova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 79-82. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 84.60. Jt
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/120643
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction	uk_UA
dc.type	Article	uk_UA

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