Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
dc.contributor.author | Koval'chuk, A.V. | |
dc.contributor.author | Shevchuk, A.F. | |
dc.contributor.author | Naiko, D.A. | |
dc.contributor.author | Koval'chuk, T.N. | |
dc.date.accessioned | 2017-06-13T11:43:44Z | |
dc.date.available | 2017-06-13T11:43:44Z | |
dc.date.issued | 2005 | |
dc.description.abstract | Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness. | uk_UA |
dc.description.sponsorship | Authors express sincere gratitude to E.V. Basiuk for the availability to use their samples for measurements. The work was financially supported by the budgetary theme 1.4.1 В/109 of the Institute for Physics, NAS of Ukraine. | uk_UA |
dc.identifier.citation | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 72.80 Rj, 73.61.Wp | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/120976 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers | uk_UA |
dc.type | Article | uk_UA |
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