Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers

dc.contributor.authorKoval'chuk, A.V.
dc.contributor.authorShevchuk, A.F.
dc.contributor.authorNaiko, D.A.
dc.contributor.authorKoval'chuk, T.N.
dc.date.accessioned2017-06-13T11:43:44Z
dc.date.available2017-06-13T11:43:44Z
dc.date.issued2005
dc.description.abstractWithin the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness.uk_UA
dc.description.sponsorshipAuthors express sincere gratitude to E.V. Basiuk for the availability to use their samples for measurements. The work was financially supported by the budgetary theme 1.4.1 В/109 of the Institute for Physics, NAS of Ukraine.uk_UA
dc.identifier.citationPhotoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 72.80 Rj, 73.61.Wp
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120976
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePhotoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layersuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
17-Koval'chuk.pdf
Розмір:
249.86 KB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: