Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

dc.contributor.authorDanilyuk, A.I.
dc.contributor.authorDobrovolskiy, Yu.G.
dc.date.accessioned2017-05-28T18:05:40Z
dc.date.available2017-05-28T18:05:40Z
dc.date.issued2007
dc.description.abstractWe have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained.uk_UA
dc.identifier.citationEstimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 85.60.Dw
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118132
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleEstimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriersuk_UA
dc.typeArticleuk_UA

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