Porous nanostructured InP: technology, properties, application

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dc.contributor.authorArsentyev, I. N.
dc.contributor.authorBobyl, A.B.
dc.contributor.authorKonnikov, S.G.
dc.contributor.authorTarasov, I.S.
dc.contributor.authorUlin, V.P
dc.contributor.authorShishkov, M.V.
dc.contributor.authorBoltovets, N.S.
dc.contributor.authorIvanov, V.N.
dc.contributor.authorBelyaev, A.E.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorKamalov, A.B.
dc.contributor.authorLytvyn, P.M.
dc.contributor.authorMarkovskiy, E.P.
dc.contributor.authorMilenin, V.V.
dc.contributor.authorRed’ko, R.A.
dc.date.accessioned2017-06-14T16:55:09Z
dc.date.available2017-06-14T16:55:09Z
dc.date.issued2005
dc.description.abstractWe prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.uk_UA
dc.description.sponsorshipThe work was made in the framework of the Russia−Ukraine Program on Nanophysics and Nanoelectronics.uk_UA
dc.identifier.citationPorous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 81.05.Rm
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121572
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePorous nanostructured InP: technology, properties, applicationuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4