Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
| dc.contributor.author | Taghiyev, T.B. | |
| dc.date.accessioned | 2017-05-26T16:25:53Z | |
| dc.date.available | 2017-05-26T16:25:53Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the photoconductivity value and the intensity of photoluminescence radiation increased in the investigated samples. A defect-formation model explaining the observed characteristics was proposed. | uk_UA |
| dc.identifier.citation | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.80.-x, 72.40.+w, 78.55 | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117763 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals | uk_UA |
| dc.type | Article | uk_UA |
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