Using ion beams for creation of nanostructures on the surface of high-stable materials
dc.contributor.author | Gorbov, I.V. | |
dc.contributor.author | Petrov, V.V. | |
dc.contributor.author | Kryuchyn, A.A. | |
dc.date.accessioned | 2017-05-26T05:44:31Z | |
dc.date.available | 2017-05-26T05:44:31Z | |
dc.date.issued | 2007 | |
dc.description.abstract | Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface have been analyzed. Application of glass substrate for creation long-term data carrier was proposed. Microrelief information record on the glass substrate surface was obtained using the ionbeam etching. | uk_UA |
dc.description.sponsorship | The authors thank the staff of V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine for their assistance in nanostructure measurements. | uk_UA |
dc.identifier.citation | Using ion beams for creation of nanostructures on the surface of high-stable materials / I.V. Gorbov, V.V. Petrov, A.A. Kryuchyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 27-29. — Бібліогр.: 5 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 81.07.-b | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117660 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Using ion beams for creation of nanostructures on the surface of high-stable materials | uk_UA |
dc.type | Article | uk_UA |
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