Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114627
ЗМІСТ
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Vitusevich S.A., Forster A., Belyaev A.E., Glavin B.A., Indlekofer K.M., Luth H., Konakova R.V.
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction
Demidenko A.A., Kochelap V.A.
Amplification of localized acoustic waves by the electron drift in a quantum well
Grigorchuk N.I.
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
Malysh N.I., Kunets, V.P., Valiukh S.I., Kunets Vas.P.
Saturation of optical absorption in CdS single crystals
Mazur Yu.I.
Photoluminescence excitation spectroscopy in narrow - gap Hg1-x-yCd xMnyTe
Korsunskaya N.E., Markevich I.V., Dzhumaev B.R., Borkovskaya L.V., Sheinkman M.K.
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
Dotsenko Yu.P.
Electro-physical properties of γ-exposed crystals of silicon and germanium
Datsenko L.I., Auleytner J., Misiuk A., Klad'ko V.P., Machulin V.F., Bak-Misiuk J., Zymierska D., Antonova I.V., Melnyk V.M., Popov V.P., Czosnyka T., Choinski J.
Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing
Bogoboyashchiy V.V.
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals
Mamikonova V.M., Kasimov F.D., Kemerchev G.P.
Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films
Avramenko S.F., Kiselev V.S., Valakh M.Ya., Visotski V.G.
Investigation of structural perfection of SiC ingots grown by a sublimation method
Tomashik Z.F., Danylenko S.G., Tomashik V.N.
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid
Ishchenko S., Vorona I., Okulov S.
ENDOR study of irradiated tooth enamel
Usenko A.Y., Carr W.N.
Silicon-on-insulator technology for microelectromechanical applications
Belyaev A.A., Belyaev A.E., Konakova R.V., Vitusevich S.A., Milenin V.V., Soloviev E.A., Kravchenko L.N., Figielski T., Wosinski T., Makosa A.
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
Sizov F.F., Reva V.P., Derkach Yu.P., Kononenko Yu.G., Golenkov A.G., Korinets S.V., Darchuk S.D., Filenko D.A.
IR sensor readout devices with source input circuits
Stronski A.V., Vlcek M., Shepeliavyi P.E., Sklenar A., Kostyukevich S.A.
Image formation properties of As40S20Se40 thin layers in application for gratings fabrication
Mitin V.F.
Resistance thermometers based on the germanium films
Venger Ye.F., Milenin V.V., Ermolovich I.B., Konakova R.V., Voitsikhovskiy D.I., Hotovy I., Ivanov V. N.
Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
Boyko O.V., Negriyko A.M., Yatsenko L.P.
Iodine-stabilized He-Ne laser pumped by transverse rf-discharge
Zabello E., Syaber V., Khizhnyak A.
Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material
Khizhnyak A., Galich G., Lopiitchouk M.
Characteristics of thermal lens induced in active rod of cw Nd:YAG laser
Serdega B.K., Venger Ye.F., Nikitenko Ye.V.
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
Klad'ko V.P., Grigoriev D.O., Datsenko L.I., Machulin V.F., Prokopenko I.V.
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals