Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114593
ЗМІСТ
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Makara V.A., Steblenko L.P., Kolchenko Yu.L., Naumenko S.M., Lisovsky I.P., Mazunov D.O., Mokliak Yu.Yu.
Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
Asnis Yu.A., Baranskii P.I., Babich V.M., Zabolotin S.P., Ptushinskii Yu.G., Sukretnyi V.G.
Mass-spectrometric investigations of gas evolution
Madatov R.S., Tagiyev B.G., Najafov A.I., Tagiyev T.B., Gabulov I.A., Shakili Sh.P.
Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
Berrah S., Abid H., Boukortt A.
The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
Chuiko G., Don N., Martyniuk V., Stepanchikov D.
Effect of symmetry center losses on energy bands and carrier kinematics in Zn3As2 and Cd3As2
Shutov S.V., Baganov Ye.A.
Simulation of strain fields in GaSb/InAs heteroepitaxial system
Morozovska A.N.
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy
Khemissi S., Merabtine N., Zaabat M., Kenzai C., Saidi Y., Amourache S.
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
Ahmad Ibrahim, Ho Yeap Kim, Majlis Burhanuddin Yeop
Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
Chowdhury S., Hussain A.M.P., Ahmed G.A., Mohanta D., Choudhury A.
Third order nonlinear optical response of PbS quantum dots
Ismail Raid A., Koshapa Jospen, Abdulrazaq Omar A.
Ge/Si heterojunction photodetector for 1.064 μm laser pulses
Merabtine N., Boualleg A., Benslama M.
Analysis of radiation patterns and feed illumination of the reflector antenna using the physical and geometrical optics
Boltovets N.S., Konakova R.V., Kudryk Ya.Ya., Milenin V.V., Mitin V.F., Mitin E.V., Lytvyn O.S., Kapitanchuk L.M.
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
Gritsenko M.I., Kucheev S.I., Lytvyn P.M., Tishenko V.G., Tkach V.M., Yelshansky V.B.
Micropatterning in bistable cholesteric device with Bragg's reflection
Mahshid S., Sasani Ghamsari M., Askari M., Afshar N., Lahuti S.
Synthesis of TiO2 nanoparticles by hydrolysis and peptization of titanium isopropoxide solution [текст статьи отсутствует]
Houk Y., Nazarov A.N., Turchanikov V.I., Lysenko V.S., Andriaensen S., Flandre D.
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Bacherikov Yu.Yu., Davydenko M.O., Dmytruk A.M., Dmitruk I.M., Lytvyn P.M., Prokopenko I.V., Romanyuk V.R.
CdSe nanoparticles grown with different chelates
Venger E.F., Knorozok L.M., Melnichuk L.Yu., Melnichuk O.V.
Synthesis and properties of semiconductor solid solutions (inSb)1-x(CdTe)x
Filippov A.P., Strizhak P.E., Denisyuk D.I., Serebry T.G., Ivaschenko T.S.
Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine
Fedorenko L.L., Linnik L.F., Linnik L.G., Yusupov M.M., Solovyov E.A., Sirmulis E.
The influence of Cr concentration on time resolution of GaAs detectors
Dovganyuk V.V., Fodchuk I.M., Gimchinsky O.G., Oleinych-Lysyuk A.V., Nizkova A.I.
Determination of dominant type of defects in Cz-Si single crystals after irradiation with high-energy electrons [текст статьи отсутствует]