Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4

ЗМІСТ

Mamykin S., Dmitruk N., Korovin A., Naumenko D., Dmytruk A., Park Yeon-Su
Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface

Marchylo O.M., Zavjalova L.V., Nakanishi Y., Kominami H., Hara K., Belyaev A.E., Svechnikov G.S., Fenenko L.I., Poludin V.I.
Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method

Gaidar G.P.
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Korotyeyev V.V., Syngayivska G.I., Kochelap V.A., Klimov A.A.
Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

Borblik V.L., Shwarts Yu.M., Shwarts M.M.
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

Semchuk O.Yu., Gichan О.І., Grechko L.G.
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors

Boiko I.I.
Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect

Abbasov Sh.M., Aghaverdiyeva G.T., Ibrahimov Z.A., Farajova U.F., Ibrahimova R.A., Mehdevi Heyder
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge_1-xSi_x heterostructure

Vlasenko N.A., Oleksenko P.F., Mukhlyo M.A., Veligura L.I., Denisova Z.L.
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures

Severin V.S.
Influence of polarization of semiconductor lattice on its optical vibration spectrum

Kovalyuk Z.D., Lastivka G.I., Khandozhko О.G.
Fine structure of NQR spectra in GaSe

Babych V.М., Olikh Ja.М., Tymochko M.D.
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si-Fz

Misevitch I.Z., Ushenko Yu.O., Pridiy O.G., Motrich A.V., Tomka Yu.Ya., Dubolazov O.V.
Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure

Ushenko Yu.O., Tomka Yu.Ya., Pridiy O.G., Motrich A.V., Dubolazov O.V., Misevitch I.Z., Istratiy V.V.
Wavelet analysis for Mueller matrix images of biological crystal networks

Petrov V.V., Kryuchyn A.A., Gorbov I.V., Kossko I.O., Kostyukevych S.O.
Analysis of properties of optical carriers after long-term storage 

Burbelo R., Isaiev M., Kuzmich A.
Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation

Ivanov I.I., Nychyporuk T.V., Skryshevsky V.A., Lemiti M.
Thin silicon solar cells with SiО_х/SiN_x Bragg mirror rear surface reflector

Prokopiv V.V., Fochuk P.M., Gorichok I.V., Vergak E.V.
Thermodynamics analysis of defects created processes in the crystals of cadmium telluride in the conditions of high temperature annealing

Zaabat M., Draid M.
Two-dimensional modeling the static parameters for a submicron field-effect transistor

Mihir M. Vora, Aditya M. Vora
Stacking Faults in the single crystals

Emad Hameed Hussein
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

Author Index 2009