Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 1

Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, № 1

ЗМІСТ

Deibuk V.G., Korolyuk Yu.G.
Local atomic structures in Si_1-xGe_x and Si_1-xSn_x random solid solutions

Tralle I., Pasko W.
Spin ballistic transport and quantum intreference in mesoscopic loop structures

Koryakov S.V., Gubanov V.O., Biliy M.M., Slobodyanyuk O.V., Yanchuk Z.Z.
Application of method of projective representations for TO analysis of exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP₂ and CdP₂

Vlasenko N.A., Belyaev A.E., Denisova Z.L., Kononets Ya.F., Komarov A.V., Veligura L.I.
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Ostapov S.E., Gorbatyuk I.N., Zhikharevich V.V.
Investigation of the physical properties of multi-component solid solutions Hg_1-x-y-zA_xB_yC_zTe

Strelchuk V.V., Kladko V.P., Yefanov O.M., Kolomys O.F., Gudymenko O.I., Valakh M.Ya.
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study

Dmitruk N.L., Karimov A.V., Konakova R.V., Kudryk Ya.Ya., Sachenko A.V.
Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

Izhnin I.I., Bogoboyashchyy V.V., Kurbanov K.R., Mynbaev K.D., Ryabikov V.M.
Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-Cd_xHg_1-xTe

Khomenkova L.Yu., Korsunska N.E., Bulakh B.M., Sheinkman M.K., Stara T.R.
The nature of red emission in porous silicon

Glushko A.E., Glushko E.Ya., Karachevtseva L.A.
Theory of two-dimensional photonic crystals with lamellar cylindrical pores

Dmitruk N.L., Borkovskaya O.Yu., Kostylyov V.E., Sachenko A.V., Sokolovskiy I.O.
Experimental study and theoretical analysis of photoelectric characteristics of Al_xGa_1-xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces

Karimov A.V., Yodgorova D.M.
Photoconverters with microrelief p-n-junction on a basis of p Al_xGa_1-x-p GaAs-n GaAs-n⁺ GaAs heterojunction

Hodovaniouk V.M., Doktorovych I.V., Butenko V.K., Yuryev V.H., Dobrovolsky Yu.G.
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions

Hasani J.B., Farmahini M.F., Hajiesmaeilbaigi F.
Synthesis of highly doped Nd:YAG powder by the SOL-GEL method

Nazarov A.N., Skorupa W., Vovk Ja.N., Osiyuk I.N., Tkachenko A.S., Tyagulskii I.P., Lysenko V.S., Gebel T., Rebohle L., Yankov R.A., Nazarova T.M.
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

Pisco M., Consales M., Viter R., Smyntyna V., Campopiano S., Giordano M., Cusano A., Cutolo A.
Novel SnO₂ based optical sensor for detectin g the low ammonia concentration in water at room temperatures

Polyanskii P.V., Felde Ch.V.
Quadric hologram-based self-conjugation of vortex beams

Berezhinsky L.I., Dae-Yong Park, Chang-Min Sung, Kwang-Ho Kwon, Sang-Hoon Chai
Filter for TV and video cameras

Feychuk P., Kopyl O., Pavlovich I., Shcherbak L.
Growing the high-resistive Cd_1-xZn_xTe single crystals from a vapor phase

Svechnikov S.V.
Review of monograph