Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114452
Зміст
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Kryuchenko Yu.V., Korbutyak D.V.
Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle
Karachevtseva L., Goltviansky Yu., Kolesnyk O., Lytvynenko O., Stronska O.
Wannier–Stark electro-optical effect and photonic modes in 2D macroporous silicon structures with SiO2 nanocoatings
Fodchuk I.M., Gutsuliak I.I., Zaplitniy R.A., Balovsyak S.V., Yaremiy I.P., Bonchyk O.Yu., Savitskiy G.V., Syvorotka I.M., Lytvyn P.M.
Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Kopcansky P., Timko M., Mitrova Z., Zavisova V., Koneracka M., Tomasovicova N., Tomco L., Kovalchuk O.V., Bykov V.M., Kovalchuk T.M., Lad A.I.
Effect of magnetic nanoparticles with various geometrical shapes on morphology and dielectric properties of nanodispersions of nematic liquid crystal in polymer matrix
Studenyak I.P., Kranj?ec M., Buchuk R.Yu., Stephanovich V.O., Kokenyesi S.
Raman scattering studies of composites based on Cu6PS5X (X = I Br) superionic nanocrystals
Safriuk N.V., Stanchu G.V., Kuchuk A.V., Kladko V.P., Belyaev A.E., Machulin V.F.
X-ray diffraction investigation of GaN layers on Si(111) and Al2O3 (0001) substrates
Vlaskina S.I., Mishinova G.N., Vlaskin V.I., Rodionov V.E., Svechnikov G.S.
8H- 10H- 14H-SiC formation in 6H-3C silicon carbide phase transitions
Sheremet V.N.
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
Kulish N.R., Kunets V.P., Narsingi K.Y., Manasreh M.O., Kunets Vas. P.
Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals
Belyaev A.E., Boltovets N.S., Zhilyaev Yu.V., Zhigunov V.S., Konakova R.V., Panteleev V.N., Sachenko A.V., Sheremet V.N.
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
Borovoy N., Gololobov Yu., Isaienko G., Salnik A.
On features of crystal structure of semiconductor-ferroelectric Ag3AsS3
Maslov V.P., Kachur N.V.
Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts
Rudenko T., Nazarov A., Kilchytska V., Flandre D., Popov V., Ilnitsky M., Lysenko V.
Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs