Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1

ЗМІСТ

Gomeniuk Yu.V.
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Sarikov A., Naseka V.
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

Bacherikov Yu.Yu., Boltovets N.S., Konakova R.V., Kolyadina E.Yu., Ledn’ova T.M., Okhrimenko O.B.
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂/ thin films

Jivani A.R., Jani A.R.
Phase diagrams of Si_1-xGe_x solid solution: a theoretical approach

Taqi A., Diouri J.
Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields

Gaidar G.P.
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

Vakiv M., Golovchak R., Chalyy D., Shpotyuk M., Ubizskii S., Shpotyuk O.
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses

Rosul R.R., Guranich P.P., Gomonnai O.O., Slivka A.G., Rigan M.Yu., Rubish V.M., Guranich O.G., Gomonnai A.V.
Dielectric properties of TlIn(S_1-xSe_x)₂ polycrystals near phase transitions

Kovalyuk Z.D., Duplavyy V.Y., Sydor O.M.
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

Borschak V.A., Brytavskyi Ie.V., Smyntyna V.A., Lepikh Ya.I., Balaban A.P., Zatovskaya N.P.
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S

Dmitriev M.V., Isaienko O.Iu., Ivanisik А.І., Korotkov P.A.
Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry

Korovin A.V.
Ultrafast light-matter interaction in transparent medium

Osinsky V.I., Masol I.V., Lyahova N.N., Deminsky P.V.
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics

Dmitruk N.L., Borkovskaya O.Yu., Naumenko D.O., Havrylenko T.S., Basiuk E., Shpilevsky
Effect of nanosize metal overlayer on C₆₀ thin film optical parameters near fundamental absorption edge

Sizov F.F., Smirnov A.B., Savkina R.K., Deriglazov V.A., Yakushev M.V.
Narrow-gap piezoelectric heterostructure as IR detector

Sghaier H., Bouzaiene L., Sfaxi L., Maaref H.
A novel Al_0.33Ga_0.67As/In_0.15Ga_0.85As/GaAs quantum well Hall device grown on (111) GaAs

Ermakov V.M., Kolomoets V.V., Panasyuk L.I., Nazarchuk P.F., Yashchynskiy L.V.
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Lozovski V., Lysenko V., Spivak M., Sterligov V.
Interaction between viral particles and structured metal surface under surface plasmon propagation

Felinskyi S.G.; Korotkov P.A.; Felinskyi G.S.
Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband