Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3

ЗМІСТ

Milenin G.V.
Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging

Azhniuk Yu.M., Gomonnai A.V., Gomonnai O.O., Hasynets S.M., Kováč F., Lopushansky V.V., Petryshynets I., Rubish V.M., Zahn D.R.T.
Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Piskovoi V.N., Venger E.F.
On the dielectric approximation in the additional light waves theory: an historical rehabilitation (recovery)

Sachenko A.V., Kostylyov V.P., Korkishko R.M., Kulish M.R., Sokolovskyi I.O., Vlasiuk V.M., Khomenko D.V.
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator

Sukach A.V., Tetyorkin V.V., Tkachuk A.I.
Carrier transport mechanisms in reverse biased InSb p-n junctions

Chegel V.I., Lytvyn V.K., Lopatynskyi A.M., Shepeliavyi P.E., Lytvyn O.S., Goltvyanskyi Yu.V.
Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device

Khrystosenko R.V.
Optimization of the surface plasmon resonance minimum detection algorithm for improvement of method sensitivity

Myroniuk D.V., Ievtushenko A.I., Lashkarev G.V., Maslyuk V.T., Timofeeva I.I., Baturin V.A., Karpenko O.Yu., Kuznetsov V.M., Dranchuk M.V.
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

Starchyk M.I., Marchenko L.S., Pinkovska M.B., Shmatko G.G., Varnina V.I.
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions

Melezhik E.O., Gumenjuk-Sichevsk J.V., Sizov F.F.
Composition and concentration dependences of electron mobility in semi-metal Hg_1-xCd_xTe quantum wells

Kornaga V.I., Sorokin V.M., Rybalochka A.V., Oliinyk O.S., Kornaga N.P.
Color mixing models for smart lighting systems based on RGBW and WW LEDs

Bacherikov Yu.Yu., Zhuk A.G., Okhrimenko O.B., Kardashov D.L., Kozitskiy S.V.
Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis

Konoreva O.V., Lytovchenko M.V., Malyi Ye.V., Petrenko I.V., Pinkovska M.B., Tartachnyk V.P., Shlapatska V.V.
Degradation of electrooptical characteristics of serial GaP light-emitting diodes caused by fast electrons

Belyaev A.E., Boltovets N.S., Bobyl A.V., Zorenko A.V., Arsentiev I.N., Kladko V.P., Kovtonyuk V.M., Konakova R.V., Kudryk Ya.Ya., Sachenko A.V., Slipokurov V.S., Slepova A.S., Safryuk N.V., Gudymenko A.I., Shynkarenko V.V.
Ohmic contacts based on Pd to indium phosphide Gunn diodes

Michailovska K.V., Indutnyi I.Z., Kudryavtsev O.O., Sopinskyy M.V., Shepeliavyi P.E.
Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix

Pashchenko G.A., Kravetskyi M.Yu., Fomin A.V.
Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing

Khmil’ D.N., Kamuz A.M., Oleksenko P.F., Kamuz V.G., Aleksenko N.G., Kamuz O.A.
Determination of the spectral dependence for the absorption coefficient of phosphor inorganic microparticles

Shevchik-Shekera A.V., Dukhnin S.E.
Design of optical components for terahertz/sub-terahertz imaging systems

Markevich I.V., Stara T.R., Bondarenko V.O.
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics

Kolyadina E.Yu., Matveeva L.A., Neluba P.L., Venger E.F.
Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

Yaremko A.M., Yukhymchuk V.O., Romanyuk Yu.A., Virko S.V.
Theoretical and experimental study of Raman scattering in mixed (MoS₂)_x(MoSe₂)_1-x layered crystals

Ivashchyshyn F.O., Grygorchak I.I., Klapchuk M.I.
Impedance anisotropy and quantum photocapacity of bio/inorganic clathrates InSe〈histidine〉 and gase〈histidine〉

Onachenko M.S.
Superluminescent laser-integrated nanocarbonized matrix pumping the neodymium lasers YAG:Nd