Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained.

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Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ.

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