Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2

ЗМІСТ

Kryuchenko Yu.V., Sachenko A.V., Bobyl A.V., Kostylyov V.P., Romanets P.N., Sokolovskyi I.O., Shkrebti A.I., Terukov E.I.
Efficiency a-Si:H solar cell. Detailed theory

Fediv V.I., Rudko G.Yu., Savchuk A.I., Gule E.G., Voloshchuk A.G.
Synthesis route and optical characterization of CdS:Mn/polyvinyl alcohol nanocomposite

Sorokin V.M., Konakova R.V., Kudryk Ya.Ya., Zinovchuk A.V., Bigun R.I., Kudryk R.Ya., Shynkarenko V.V.
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

Boiko I.I.
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum

Gomeniuk Y.V.
Current transport mechanisms in metal – high-k dielectric – silicon structures

Studenyak I.P., Kranjcec M., Neimet Yu.Yu., Pop M.M.
Optical absorption edge in (Ag₃AsS₃)_x(As₂S₃)_1-x superionic glasses

Paiuk A.P., Stronski A.V., Vuichyk N.V., Gubanova A.A., Krys’kov Ts.A., Oleksenko P.F.
Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metal

Makhanets O.M., Tsiupak N.R., Voitsekhivska O.M.
Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range

Boyko V.G., Zayats N.S.
Application of ferroelectrics to create electroluminescent indicators of temperature

Vlasov S.I., Ovsyannikov A.V., Ismailov B.K., Kuchkarov B.H.
Effect of pressure on the properties of Al-SiO₂-n-Si‹Ni› structure

Smirnov A. B.
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction

Storozhenko I.P., Yaroshenko A.N., Kaydash M.V.
Graded-gap AlInN Gunn diodes