Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114602
ЗМІСТ
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Sachenko A.V., Gorban A.P., Korbutyak D.V., Kostylyov V.P., Kryuchenko Yu.V., Chernenko V.V.
Exciton effects in band-edge electroluminescence of silicon barrier structures
Dolgolenko A.P., Litovchenko P.G., Litovchenko A.P., Varentsov M.D., Lastovetsky V.F., Gaidar G.P.
Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
Talanin V.I., Talanin I.E.
Nucleation, growth and transformation of microdefects in FZ-Si
Sasani M.
The simple approach to determination of active diffused phosphorus density in silicon
Semchuk O.Yu., Bila R.V., Willander M., Karlsteen M.
Laser-induced photoconductivity of ferromagnetic semiconductors
Patskun I.I., Slipukhina I.A.
Investigation of β-CdP2 crystals by laser spectroscopy methods
Lozovski V., Reznik D.
Electrodynamic linear response of a superconductor film located at the surface of semiconductor
Bryksa V.P., Tarasov G.G., Masselink W.T., Nolting W., Mazur Yu.I., Salamo G.J.
Ferromagnetism induced in diluted A1-xMnxB semiconductors
Dremlyuzhenko S.G., Zakharuk Z.I., Rarenko I.M., Srtebegev V.M., Voloshchuk A.G., Yurijchuk I.M.
State of Cd1-xZnxTe and Cd1-xMnxTe surface depending on treatment type
Kondrat O., Popovich N., Dovgoshej N.
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge33As12Se55
Boltovets N.S., Ivanov V.N., Konakova R.V., Kudryk Ya.Ya., Milenin V.V., Lytvyn O.S., Lytvyn P.M., Vlaskina S.I., Agueev O.A., Svetlichny A.I., Soloviev S.I., Sudarshan T.S.
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Prokofiev T.A., Kovalenko A.V., Polezaev B.A., Bulanyi M.F., Gorban A.A., Hmelenko O.V.
Individual glow bands of Mn2+ ions photoluminescence in plastically deformed ZnS single crystals
Slutskii M.I.
Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs
Gomenyuk O.V., Nedilko S.G., Stus N.V., Chukova O.V.
Luminescence properties of KAlP2O7 crystals doped with chromium ions
Tikhonov E., Yashchuk V., Prygodjuk O., Bezrodny V., Filatov Yu.
Multiple scattering effect on luminescence of the dyed polymer matrix
Vlasenko N.A., Purwins H.-G., Denisova Z.L., Kononets Ya.F., Niedernostheide F.-J., Veligura L.I., Zuccaro S.
Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures
Min'ko V.I., Shepeliavyi P.E., Dan'ko V.A., Romanenko P.F., Litvin O.S., Indutnyy I.Z.
Recording of high efficiency diffraction gratings by He-Ne laser
Morozovska A.N., Kostyukevych S.A., Nikitenko L.L., Kryuchin A.A., Kudryavtsev A.A., Shepeliavyi P.E., Moskalenko N.L.
Optical recording of information pits in thin layers of chalcogenide semiconductors
Datsyuk V.V.
Properties of optical microsensor based on observation of whispering-gallery modes
Vashchenko V., Patlashenko Zh., Chernysh E.
Metrological support of satellite-borne UV-spectrometry using a backscattering technique
Merabtine N., Amourache S., Bouaouina M., Zaabat M., Saidi Y., Kenzai C.
An improved contribution to optimize Si and GaAs solar cell performances
Hashim U., Ayub R.M., On K.S.
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell