Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 1

Зміст

Kundu J., Sarkar C.K., Mallick P.S.
Calculation of electron mobility and effect of dislocation scattering in GaN

Dolgolenko A.P., Gaidar G.P., Varentsov M.D., Litovchenko P.G.
The radiation hardness of pulled silicon doped with germanium

Lukiyanets B.A.
Qualitative analysis of electron states in nanoobjects

Efremov A., Klimovskaya A., Hourlier D.
The role of multicomponent surface diffusion in growth and doping of silicon nanowires

Gorbov I.V., Petrov V.V., Kryuchyn A.A.
Using ion beams for creation of nanostructures on the surface of high-stable materials

Maleki M., Sasani Ghamsari M., Mirdamadi Sh., Ghasemzadeh R.
A facile route for preparation of CdS nanoparticles

Beliak I.V., Kravets V.G., Kryuchin A.A.
Luminescence of the pyrazoline dye in nanostructured zeolite matriх

Sadeghzadeh-Attar A., Sasani Ghamsari M., Hajiesmaeilbaigi F., Mirdamadi Sh.
Template-based growth of TiO₂ nanorods by sol-gel process

Min'ko V.I., Shepeliavyi P.E., Indutnyy I.Z., Litvin O.S.
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist

Horvat G.T., Kondratenko O.S., Loja V.Ju., Myholynets I.M., Rosola I.J., Jurkovуch N.V.
The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties

Berezhinsky L.I., Berezhinsky I.L., Pipa V.I., Matyash I.Ye., Serdega B.K.
Polarization analysis of birefringence in uniaxially deformed silicon crystals

Vakulenko O.V., Severin V.S.
Calculation of the metal reflectivity with taking polarization into consideration

Abdelhakim Mahdjoub
Graded refraction index antireflection coatings based on silicon and titanium oxides

Kosobutskyy P.S.
Simulation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures

Ekkurthi Sreenivasa Rao, Satyam M., Lal Kishore K.
Electro-optical hybrid logic gates

Fenenko L., Guoliang Mao, Akihiro Orita, Junzo Otera, Smertenko P., Svechnikov G., Jun-ichi Nishide, Hiroyuki Sasabe, Chihaya Adachi
14-bis(22-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes

Kubytskyi V., Reshetnyak V.
Finite-difference time-domain method calculation of light propagation through H-PDLC

Primachenko V.E., Serba O.A., Chernobai V.A., Venger E.F.
Effect of oxidation of catalytically active silicon-based electrodes on water decomposition

Bousnane Z., Merabtine N., Benslama M., Bousaad F.
The current density order based on the Ginzburg-Landau description

Bousnane Z., Benslama M., Merabtine N.
Entropic potential as manifold for the reduced entropy representations in superconductivity