Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 4

Зміст

Belyaev A.E., Boltovets N.S., Ivanov V.N., Kapitanchuk L.M., Kladko V.P., Konakova R.V., Kudryk Ya.Ya., Kuchuk A.V., Lytvyn O.S., Milenin V.V., Sheremet V.N., Sveshnikov Yu.N.
Development of high-stable contact systems to gallium nitride microwave diodes

Dolgolenko A.P., Varentsov M.D., Gaidar G.P., Litovchenko P.G.
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

Grushko E.V., Maslyanchuk O.L., Mathew X., Motushchuk V.V., Kosyachenko L.A., Streltsov E.A.
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure

Khomenkova L., Korsunska N., Sheinkman M., Stara T.
Chemical composition and light emission properties of Si-rich-SiO_x layers prepared by magnetron sputtering

Shutov S.V., Shtan’ko A.D., Kurak V.V., Litvinova M.B.
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing

Chuiko G.P., Dvornik O.V.
Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry

Morozovska A.N., Svechnikov S.V.
The influence of size effects on thin films local piezoelectric response of thin films

Lev S.B., Sugakov V.I., Vertsimakha G.V.
Spin polarization in semimagnetic semiconductor two barrier spin filters

Dvoretsky S.A, Ikusov D.G., Kvon Z.D., Mikhailov N.N., Remesnik V.G., Smirnov R.N., Sidorov Yu.G., Shvets V.A.
HgCdTe quantum wells grown by molecular beam epitaxy

Syngaivska G.I., Korotyeyev V.V.
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields

Sachenko A.V., Sokolovskyi I.O., Kazakevitch A., Shkrebtii A.I., Gaspari F.
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures

Коbus E.S., Dmytrenko O.P., Kulish N.P., Prylutskyy Yu.I., Belyy N.M., Syromyatnikov V.G., Studzinskyy S.L., Zabolotnyy M.A., Gryn'ko D.A., Shchur D.V., Shlapatskaya V.V.
Radiative recombination of the PVK/C60 molecular complexes with the radiation damages

Ivanov V.I., Karachevtseva L.A., Karas N.I., Lytvynenko O.A., Parshin K.A., Sachenko S.A.
Photoconductivity in macroporous silicon with regular structure of macropores

Popovych K.O.
Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors

Kovalchuk V.V.
Cluster morphology silicon's nanoparticle

Kryuchin A.A., Pankratova A.V., Kassko I.A., Nagorny F.V., Chirkov D.V.
Analysis of methods for high-speed forming the relief microimages on metallic substrates

Kollyukh O.G., Kyslyi V.P., Liptuga A.I., Morozhenko V., Pipa V.I., Venger E.F.
Coherent thermal radiation of Fabry-Perot resonator structures